CRM is a high-tech enterprise under China Resources Group responsible for the investment, development, and management of microelectronics business. It is a leading IDM semiconductor dragon head enterprise in China with integrated management capabilities in the entire industry chain, including chip design, mask manufacturing, wafer manufacturing, packaging and testing. Its products focus on the fields of power semiconductors, digital analog hybrid, intelligent sensors, and intelligent control. Currently, the company's main business can be divided into two business segments: products and solutions, and manufacturing and services.
As of now, according to industry public data, the company ranks first among power semiconductor enterprises in China, first in MOSFET scale in China, second in MEMS scale in China, and first in mask manufacturing enterprises in China. At present, the company's business scope covers the Yangtze River Delta, Chengdu Chongqing twin cities, Guangdong Hong Kong Macao Greater Bay Area and other regions, continuously optimizing resource allocation.
In 2024, the company's revenue exceeded 10 billion yuan, reaching 10.119 billion yuan, and the net profit attributable to the parent company was 762 million yuan. Among them, the net profit in the fourth quarter increased by 26.28% month on month, and the profitability continued to improve; At the same time, the revenue in the first quarter of 2025 also showed a sustained upward trend. The annual R&D investment reached a new high of 1.167 billion yuan, an increase of 1.13% compared to the same period last year, accounting for 11.53% of the revenue, achieving five consecutive years of positive growth in R&D investment since its listing.
As one of the few domestic enterprises that has achieved full industry chain layout of IDM, the company promotes the upgrading of the power semiconductor industry through systematic technological innovation
In the field of silicon carbide, the company has completed the layout of full voltage platforms (650V/1200V/1700V) for two major product lines, SiC MOS G2 and JBS G3, with key indicators reaching the international advanced level - MOSFET specific on resistance (Rsp) is comparable to mainstream international competitors, and JBS power density has achieved global leadership. Milestone progress has been made in the research and development of automotive grade products, with the development of a series of modules covering single tube/half bridge/full bridge. These modules have been certified by mainstream car manufacturers and have been delivered in bulk, marking the official entry of domestically produced SiC devices into the core supply chain of automotive power systems. The research and development of the new generation of planar gate and Trench structure technology is accelerating, laying the foundation for key technologies for the next generation of high-performance products. In terms of market application, the product has achieved large-scale introduction to top customers in strategic fields such as new energy vehicles, supercharging piles, and photovoltaic inverters, with sales doubling year-on-year. It has won industry authoritative recognition such as "Top 10 SiC IDMs in China" and "Most Innovative Product Award" from CIAS.
Gallium nitride technology has made synchronous breakthroughs, with G3 platform products ranking among the top in the industry in terms of mass production scale and significantly better Rsp indicators than peers. G4 high-power industrial control products have achieved mass production breakthroughs, and G5 platform research and development has built technological advantages across generations. Two landmark achievements have been made in innovative research and development: 40V/80V E-mode devices have broken through reliability bottlenecks and filled the gap in domestic medium voltage GaN technology; The development of 8-inch wafers and WLCSP packaging technology is progressing in an orderly manner, providing differentiated solutions for emerging markets such as consumer electronics.
In 2024, the company invested approximately 1.167 billion yuan in technology research and development, setting a new historical high since its listing. R&D investment accounted for 11.53% of revenue, and R&D investment has maintained positive growth for five consecutive years since its listing. The company focuses on promoting core projects such as silicon carbide power devices, gallium nitride devices, and MEMS sensors, and the sales revenue of silicon carbide and gallium nitride power devices has maintained rapid growth year-on-year. The market positioning accurately grasps the demand in the fields of new energy vehicles, industrial control, and the Internet of Things. The company ranks first among Chinese power semiconductor enterprises, first among Chinese MOSFET scale, second among Chinese MEMS scale, and first among Chinese mask manufacturing enterprises. Product innovation has launched new products including IGBT, high-voltage MOS and other power devices and modules, as well as new integrated circuit products in MCU, IPM, optoelectronics and other categories. At the same time, new processes for wafer manufacturing and packaging have also been revealed one after another. In terms of brand building, by actively participating in semiconductor exhibitions and technology summits, the industry's influence has significantly increased. The financial performance is stable, with annual revenue of 10.119 billion yuan, net profit attributable to the parent company of 762 million yuan, and operating cash flow increasing by 17.17% year-on-year. As of the end of 2024, the company has 10756 employees, including 4298 R&D technicians, accounting for a total of 39.96% of the total number of employees.