1. Technical Advantages

Process Iteration and Optimization:
The 3rd - generation planar gate SiC MOSFET process has significantly increased device density by reducing the cell Pitch (unit spacing) . On the premise of ensuring the device's voltage withstand capability and short - circuit capacity, the specific on - resistance (Rsp) has been reduced to 2.5mΩ·cm², reaching the leading level in the world.

Improvement in High - temperature Performance:
The temperature coefficient of the on-resistance (Ron) of the 3rd - generation SiC MOSFETs has been significantly reduced, maintaining stable low losses at high temperatures. For example, for the 3rd-generation 1200V SiC MOSFET, when the driving voltage is 15V, the Ron at a high temperature of 175°C is only 1.42 times that at room temperature (25°C); when the driving voltage is 18V, the ratio is 1.65 times, while the other products in the market are almost all above 2 times.

2. Product Technical Specifications

High Reliability Standards:
The entire series of products are designed and tested in accordance with the automotive reliability standard (AEC - Q101). For key products, such as the first 1200V high current SiC MOSFET product (IV3Q12013T4Z), more stringent reliability verification under extreme conditions is added.

Full-range Specifications:
Voltage platforms of 650V, 750V, 1200V, 1400V and 3300V can meet various bus voltages and applications in multiple industries; the on - resistance specifications cover 11mΩ to 150mΩ, meeting the needs of high, medium and low power segments.

Innovative Packaging:
00001. 1）The TO247 - 4Slim package with lower parasitic inductance is beneficial to reduce losses, and its larger pin spacing reduces the risk of welding short circuits; 2) The TC3Pak and SMPD top - cooling packages can simplify the heat dissipation design, reduce the system volume, and support automated surface mounting.

3. Breakthroughs in Multi - field Applications

The 3rd - generation 1200V SiC MOSFET has been mass - delivered to many well - known photovoltaic inverter and charging pile customers , and has also obtained power train inverter project designations from many electric- vehicle customers. By the end of June 2025, the cumulative delivery of the 3rd-generation SiC MOSFET has reached nearly 3 million pieces, which has been verified and recognized by the market.