The EPC2367 is a 100 V, enhancement-mode gallium nitride (eGaN^®) FET that delivers industry-leading efficiency, switching speed, and power density for advanced power conversion applications. With a typical RDS(on) of just 1.2 mΩ and ultra-low gate charge (QG), it is specifically engineered for high-frequency, high-performance power systems where traditional silicon MOSFETs fall short.
Packaged in a compact, thermally enhanced 3 mm x 5 mm QFN, the EPC2367 supports top-side cooling and is optimized for layouts that require minimal parasitics—enabling faster design cycles and superior thermal management. It operates reliably at switching frequencies up to several MHz, making it ideal for power designers looking to reduce system size, improve transient response, and minimize EMI.
Key Features:
• Voltage rating: 100 V
• Typical RDS(on): 1.2 mΩ
• Ultra-low QG and QOSS for fast switching
• Zero reverse recovery and low output capacitance
• Top-side cooled QFN package (3 mm x 5 mm)
• Optimized for high-speed, high-efficiency power conversion
Target Applications:
• High-density DC-DC converters in AI servers, telecom, and industrial computing
• Lidar systems for automotive, robotics, and 3D sensing—supporting fast laser pulsing and tight form factors
• Class-D audio amplifiers where efficiency, size, and low distortion are critical
• Power stages for AI and GPU server boards, enabling better power delivery with reduced thermal load
• Battery-powered robotics, drones, and eMobility systems including electric scooters and personal transport
• Programmable power supplies and precision lab instruments requiring fast, low-noise switching
Competitive Advantages:
What sets the EPC2367 apart is its combination of electrical performance and ease of use. Compared to legacy silicon MOSFETs, it offers:
• Higher efficiency through dramatically lower switching and conduction losses
• Smaller system size thanks to high-frequency operation and reduced passive component requirements
• Simpler thermal design with top-side cooling and reduced heat generation
• Faster transient response, enabling better regulation in dynamic systems
Moreover, EPC supports the EPC2367 with robust application documentation, reference designs, and its GaN First Time Right design methodology—empowering engineers to transition confidently from silicon to GaN with fewer iterations and faster time-to-market.
In summary, the EPC2367 embodies the next step in GaN innovation—offering best-in-class performance in a compact, user-friendly form that enables designers to meet the demands of modern power systems.