Nexperia has unveiled 16 new 80 V and 100 V power MOSFETs in its compact and innovative CCPAK1212 copper-clip package, setting a new benchmark in power density and overall device performance. Designed to meet the demands of power-hungry applications, this product launch is tailored for sectors such as motor control, power supplies, battery management systems (BMS), and renewable energy infrastructure. With options for both top-side and bottom-side cooling, these MOSFETs offer flexibility and reliability, helping engineers effectively manage thermal performance under high power loads.
The key to the outstanding performance of the CCPAK1212 devices lies in their internal copper-clip construction. Unlike traditional packages that use wire bonds, these MOSFETs employ a structure where the silicon die is enclosed between two copper layers, the drain tab on one side and the source clip on the other. This architecture significantly reduces on-resistance and parasitic inductance, resulting in superior electrical performance and enhanced thermal management. The elimination of wire bonds further contributes to higher current handling and better reliability.
A standout in this new range is the PSMN1R0-100ASF, a 100 V MOSFET with an exceptionally low on-resistance of 0.99 mΩ. It can handle up to 460 A and dissipate 1.55 kW of power, all within a compact 12 mm x 12 mm CCPAK1212 footprint. Its counterpart, the PSMN1R0-100CSF, provides similar