Navitas high-power GaNSafe 4th generation family integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness in high-power applications. It is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.

GaNSafe integrated features and functions include:
• Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
• High-speed short-circuit protection, with autonomous ‘detect and protect’ within 50 ns – 4x faster than competing discrete solutions.
• Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.
• 650 V continuous, and 800 V transient voltage capability to aid survival during extraordinary application conditions.
• Easy-to-use, complete, high-power, high-reliability, high-performance power IC with only 4 pins, to accelerate customer designs.
• Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.

In 2025, GaNSafe power ICs passed both AEC-Q100 and AEC-Q101 automotive-grade certifications. This marks the official entry of GaN technology into a new phase of application in the electric vehicle market. Meanwhile, leading domestic automakers have already adopted GaNSafe to develop the world's first commercial GaN-based on-board charger (OBC).