**CoolSiC™ MOSFET G2 Series**

**Product Features:**
- Ultra-low switching losses
- Wider maximum VGS range: -10V to +25V
- Maximum overload operating temperature up to Tvj = 200°C
- Maximum short-circuit withstand time: 2µs
- Gate threshold voltage: 4.2V

**Application Benefits:**
- Higher energy efficiency
- Optimized heat dissipation
- Increased power density
- New levels of robustness
- High reliability
- Easy to parallel

**Competitive Advantages:**
- **Enhanced Performance:** Lower switching losses and higher efficiency
- **.XT Interconnection Technology:** Lower thermal resistance, resulting in cooler MOSFET operation
- Best-in-class lowest RDS(on) in the market
- Guaranteed maximum short-circuit withstand time in the datasheet
- Unique robustness

**1400V CoolSiC™ MOSFET G2 Series TO-247 and TO-247 Plus Reflow Packages**
Optimized for high bus voltage applications, these devices are designed to handle bus voltages exceeding 1000V. The power pins of the series are thickened to 2mm, enabling the devices to carry higher currents. The back-side reflow soldering design enhances the product's reliability, providing a robust solution for high-voltage power electronic systems.

**CoolSiC™ MOSFET G2 Easy 1200V Silicon Carbide Module with New Packaging – Industry First**
The industry-first 1200V CoolSiC™ MOSFET G2 Easy module adopts a new packaging design to achieve lower power losses. It also supports higher virtual operating junction temperatures and meets requirements for extended system lifetimes. This ensures reliable and stable operation of equipment in harsh environments over the long term.