2025 World Electronics Achievement Awards / Infineon Technologies / EconoDUAL™ 3 1200V/1.4mΩ CoolSiC™ MOSFET Module
Infineon Technologies
Company Website
EconoDUAL™ 3 1200V/1.4mΩ CoolSiC™ MOSFET Module
Candidate for:2025 World Electronics Achievement Awards - Power Semiconductor/Driver
**Infineon EconoDUAL™ 3 1200V/1.4mΩ CoolSiC™ SiC MOSFET Half-Bridge Module**
The module features the enhanced first-generation M1H chip, integrated NTC temperature sensor, and PressFIT pins. It is available in two variants:
- A TIM (Thermal Interface Material) pre-applied version (FF1MR12MM1HP_B11)
- A Wave-structured substrate backside version for direct liquid cooling (FF1MR12MM1HW_B11).

**Target Applications:**
- Energy storage systems
- General-purpose motor drives
- Uninterruptible Power Supplies (UPS)
- Electric vehicle charging

**Product Features**
- Low switching losses
- Outstanding gate oxide reliability
- Higher gate threshold voltage
- Increased power output
- Robust integrated body diode
- High cosmic ray robustness
- High-speed switching module
- Overload operating temperature: Tvj(op) = 175°C
- PressFIT pins
- Screw-type power terminals
- Integrated NTC temperature sensor
- Insulated substrate

**Application Benefits**
- High switching frequency
- Reduced volume and size
- Lower system costs
- High thermal efficiency

**Competitive Advantages**
- High switching frequency (>7kHz)
- Optimized for high-speed motor applications

**Application Areas**
- Commercial, construction, and agricultural vehicles (CAV)
- Energy storage systems
- General-purpose motor drives (inverters and converters)
- Motor control
- Uninterruptible Power Supplies (UPS)
- Electric vehicle charging
- Hydrogen production
Malicious vote manipulation is expressly forbidden in this voting event. The organizers reserve the right to evaluate the fairness and accuracy of the voting results. AspenCore retains the authority to interpret the rules of this event.