Main features: 100V InnoGaN power device, which adopts advanced dual-cool En FCLGA package with Very low gate charge,Ultra-low on resistance,Very small footprint;
Specification: 100V/3.5mΩ, En FCLGA3.3X3.3 package;
Application areas: AI and 48V power supply(High frequency DC-DC converter,High density DC/DC power module,Synchronous Rectification etc.)
Main advantages: INN100EA035A adopts advanced dual-cool En FCLGA package, which has a thermal conductivity 65% higher than traditional single cool package; Compared with traditional MOSFET, the power density is increased by 20%; Compared with the most advanced MOSFET, the system power loss can be reduced by more than 35%.
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