Promising Third Generation Semiconductor Technology of the Year-2025 World Electronics Achievement Awards-EE Times

Recommended reasons： Outstanding Features: - Integrated Schottky Diode: Reduces reverse conduction losses and simplifies design. - Optimized for Hard-Switching Applications**: Mitigates higher power losses typically seen in GaN devices. - Technical Specs: - Voltage: 100 V - Resistance: 1.5 mΩ - Package: 3 x 5 mm PQFN - Key Benefits: - Increased Efficiency: Reduces deadtime losses, enhancing overall system performance. - Simplified Design**: Lower BOM costs and easier power stage design. - Enhanced Compatibility: Broader compatibility with high-side gate drivers and controllers. - Potential Impact: - Electronics Design**: Enables more compact and efficient power systems, suitable for servers, telecom IBCs, and USB-C chargers. - Electronics Industry**: Accelerates GaN technology adoption, pushing power system performance boundaries and supporting decarbonization and digitalization efforts.

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InventChip Technology Co.,Ltd.

Recommended reasons： 1. Technical Advantages Process Iteration and Optimization: The 3rd - generation planar gate SiC MOSFET process has significantly increased device density by reducing the cell Pitch (unit spacing) . On the premise of ensuring the device's voltage withstand capability and short - circuit capacity, the specific on - resistance (Rsp) has been reduced to 2.5mΩ·cm², reaching the leading level in the world. Improvement in High - temperature Performance: The temperature coefficient of the on-resistance (Ron) of the 3rd - generation SiC MOSFETs has been significantly reduced, maintaining stable low losses at high temperatures. For example, for the 3rd-generation 1200V SiC MOSFET, when the driving voltage is 15V, the Ron at a high temperature of 175°C is only 1.42 times that at room temperature (25°C); when the driving voltage is 18V, the ratio is 1.65 times, while the other products in the market are almost all above 2 times. 2. Product Technical Specifications High Reliability Standards: The entire series of products are designed and tested in accordance with the automotive reliability standard (AEC - Q101). For key products, such as the first 1200V high current SiC MOSFET product (IV3Q12013T4Z), more stringent reliability verification under extreme conditions is added. Full-range Specifications: Voltage platforms of 650V, 750V, 1200V, 1400V and 3300V can meet various bus voltages and applications in multiple industries; the on - resistance specifications cover 11mΩ to 150mΩ, meeting the needs of high, medium and low power segments. Innovative Packaging: 00001. 1）The TO247 - 4Slim package with lower parasitic inductance is beneficial to reduce losses, and its larger pin spacing reduces the risk of welding short circuits; 2) The TC3Pak and SMPD top - cooling packages can simplify the heat dissipation design, reduce the system volume, and support automated surface mounting. 3. Breakthroughs in Multi - field Applications The 3rd - generation 1200V SiC MOSFET has been mass - delivered to many well - known photovoltaic inverter and charging pile customers , and has also obtained power train inverter project designations from many electric- vehicle customers. By the end of June 2025, the cumulative delivery of the 3rd-generation SiC MOSFET has reached nearly 3 million pieces, which has been verified and recognized by the market.

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Raysolve Optoelectronics (Suzhou) Company Limited

Recommended reasons： As the AI+AR glasses market accelerates, developing a highly manufacturable full-color solution remains the foremost challenge in Micro-LED micro-display technology. Raysolve has achieved a transformative breakthrough with its proprietary quantum dot photolithography technology. This innovation uniquely combines the high luminous efficiency of quantum dot materials with the precision of photolithography, enabling sub-pixel patterning via standard semiconductor processes. The result: the industry's most viable high-yield mass production solution for monolithic full-color Micro-LED micro-displays. The flagship PowerMatch® 1 Micro-LED micro-display, features 4μm pixel pitch (6,350 PPI) and 500,000 nits brightness. Its 0.13-inch screen delivers 320×240 full-color resolution (640×480 Micro-LED) with 108.5% DCI-P3 color gamut for lifelike visuals. Compared to conventional three-color combined Micro-LED light engines (~0.4cc), Raysolve's monolithic solution reduces volume by 55% to a record-breaking 0.18cc. This ultra-compact form factor enables consumer AR glasses to achieve near-regular eyewear profiles, paving the way for mainstream adoption that will redefine work and lifestyle experiences. Beyond advancing micro-display technology, Raysolve is driving industry-wide evolution in precision, color performance, brightness and energy efficiency.

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