Power Semiconductor/Driver-2025 World Electronics Achievement Awards-EE Times

Product：Industry leading 1200 V SiC MOSFETs in top-side cooled X.PAK

Recommended reasons： SiC MOSFET switches with low RDS(on) reduce power losses associated with device heating, meaning they can tolerate higher current flow, thereby enabling increased power density. However, a notable additional feature of Nexperia’s SiC MOSFETs relative to devices from other manufacturers is that they have a highly stable RDS(on) even as the application temperature rises. This is particularly beneficial in applications like onboard charging (OBC) in EVs, which have a typical switching frequency of 60 kHz or higher. This stability is realized by compensating some of the positive temperature coefficients within a device to produce a flatter RDS(on) profile (Figure 1). For example, in a Nexperia SiC MOSFET with RDS(on) = 40 mΩ, at 25 °C, this value only increases by a factor of 1.5x (to approximately 60 mΩ) as the operating temperature rises to 175 °C. This is a significant improvement compared to other competing devices, which typically exhibit a 2x increase in RDS(on) to 80 mΩ or more, meaning they have to be derated for use at higher temperatures. The superior temperature stability of Nexperia’s SiC switches means engineers can use fewer devices for the same power level in an application. For example, a 40 mΩ D2PAK MOSFET can deliver almost up to 9 kW at its maximum operating temperature, while an even smaller 30 mΩ MOSFET can deliver up to 11.5 kW of power. X.PAK top-side cooling increases degrees of freedom in designs While this power level is already impressive, even higher power levels can be achieved from switches housed in Nexperia’s next-generation top-side cooled (TSC) packaging. This has the same die inside but leverages top-side cooling via a thermal interface, a much more effective approach than cooling through the printed circuit board on which a part is mounted. For example, while a 40 mΩ D2PAK MOSFET delivering 7.5 kW of power operates at approximately 115 °C, a similar TSC device operates at a much lower temperature of only 75 °C, a reduction of up to 40 °C. A consequence of simply changing the cooling concept in this way is that the power profile can be raised even further. For a typical 3.5 kW charger, this improved device cooling could help reduce the charging time for an EV from an hour down to 40 or even 30 minutes. Alternatively, designers have the option to increase the switching frequency in their chargers, thereby bringing the benefit of smaller passive components (especially magnetics) required. This helps to reduce not only the overall solution cost, but smaller passive components also reduce the size and weight of a charging solution, which is exceptionally important for space-constrained and EVs running operating from batteries with limited charge. Yet another advantage of SiC MOSFET switches with higher current carrying capacity is that, since they produce less heat, they can survive for longer in the field, making them more reliable in expensive multi-year applications like EVs and solar PV. Furthermore, for lower power applications, designers have the option to use MOSFETs with a higher value of RDS(on), which typically have a smaller die and therefore can offer a more cost effective solution.

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Innoscience

Product：INN100EA035A

Recommended reasons： Main features: 100V InnoGaN power device, which adopts advanced dual-cool En FCLGA package with Very low gate charge,Ultra-low on resistance,Very small footprint; Specification: 100V/3.5mΩ, En FCLGA3.3X3.3 package; Application areas: AI and 48V power supply(High frequency DC-DC converter,High density DC/DC power module,Synchronous Rectification etc.) Main advantages: INN100EA035A adopts advanced dual-cool En FCLGA package, which has a thermal conductivity 65% higher than traditional single cool package; Compared with traditional MOSFET, the power density is increased by 20%; Compared with the most advanced MOSFET, the system power loss can be reduced by more than 35%.

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C*Core Technology Co., Ltd.

Product：48V Airbag Ignition Chip CCL1800B

Recommended reasons： Key Features and Specifications: The CCL1800B is the world's first 48V airbag ignition chip, featuring a highly integrated design that combines power modules, airbag ignition modules, sensor interface modules, and complex safety modules into a single chip. It can achieve millisecond - level fault detection to ensure that airbags have “zero unintended deployment and zero failure to deploy.” With a supply voltage range of 28V to 60V, it supports 16 airbag firing loops, 6 PSI5 interfaces, 10 AIN interfaces, and 2 AIO interfaces. The chip also features key pins with a withstand voltage of over 70V. It integrates a CAN transceiver that supports CANFD and meets the AEC-Q100 Grade 1 and ISO 26262 ASIL-D standards. It provides multiple power outputs (VST50, VST33, VCORE, VSVT33) and can be programmed via SPI to configure three ignition modes. It can be paired with a microcontroller to form a compact dual-chip airbag controller solution. Main features:  Supply voltage: 28V - 60V, providing system power supply function  16 airbag firing loops  6 PSI5 interfaces, each supporting 4 slots, for collecting data from perihperal acceleration sensors  10 AIN interfaces, used for seat belt and seat detection  2 AIO interfaces, for the funciton of unlocking the car door in case of a collision  Safety control function  Integrated CAN transceiver, supporting CANFD  Key pins have a withstand voltage of over 70V  AEC-Q100 Grade 1  ISO 26262 ASIL-D The CCL1800B provides VST50 (5V), VST33 (3.3V), VCORE (1.29V/3.3V), and VSVT33 (3.3V) power supplies, which can supply power to CAN transceivers, internal sensors of ECU and other devices. The VSVT33 power supply has controllable instructions. Different ignition modes can be configured through SPI programming:  Mode 1: Ignition current 1.85A, duration 0.7ms  Mode 2: Ignition current 1.75A, duration 0.5ms  Mode 3: Ignition current 1.2A, duration 2ms Application Fields: the CCL1800B is primarily used in the field of automotive airbag ignition drive, especially for the transition of new energy vehicles from a 12V to a 48V electrical architecture. It helps automotive manufacturers smoothly upgrade their existing 12V platforms to 48V, meeting the power demands of next-generation intelligent functions and promoting system integration, wiring harness optimization, and thermal design improvements in vehicles. Main Advantages: Compared with similar drive chips, the CCL1800B has higher integration, simpler system design, stronger wide voltage adaptability (better supporting 48V systems and compatibility with 12V platforms), high reliability (AEC-Q100 Grade 1) and high safety level (ISO 26262 ASIL D). It also provides millisecond-level fault detection ability to ensure "zero unintended deployments and zero missed deployments" of airbags. It effectively reduces R&D and platform transition costs for automotive manufacturers.

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STMicroelectronics

Product：ST IGBT HB Series - STGFW50HP65FB2 with 650V/50A TO3PF high speed TFS

Recommended reasons： With ST very robustness HB2 series IGBT, this new housed in TO3PF package can help our customers save the assembly cost. So this IGBT is suitable for Air-conditioning power factor correction/Welding and other power supply applications. Features • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • Welding • Power factor correction Here are key advantages and outstanding features: 1. High Efficiency & Low Power Loss • Ultra-Fast Trench Gate™ IGBT Technology • Optimized for low conduction and switching losses, improving efficiency in high-frequency applications • Low VCE (sat) (typical 1.55V at 25°C, 50A), reducing conduction losses • Fast Switching Speed • Turn-off time is minimized, suitable for PWM (Pulse-Width Modulation) applications (e.g., motor drives, inverters) 2. Robust Thermal Performance • Low Thermal Resistance (Rth JC= 1.59°C/W) • Efficient heat dissipation, allowing higher power handling without overheating • Wide Operating Temperature Range (-40°C to +175°C) • Reliable performance in harsh environments 3. Integrated Features for Enhanced Reliability • Co-Packaged Ultra-Fast Diode (Anti-Parallel Diode) • Low reverse recovery charge (Qrr) for reduced switching losses in inductive load applications (e.g., motor drives) • Improved robustness in fault conditions 4. Optimized for Industrial & Automotive Applications • High Current Capability (50A continuous, 100A pulsed) • Suitable for high-power converters, UPS, welding machines, and EV charging systems • 650V Breakdown Voltage (V CES) 5. Compact & Easy-to-Use Package* • TO3PF Package • Industry-standard footprint for easy PCB mounting and heat sink attachment • Good mechanical strength for high-vibration environments In summary: Why Choose STGFW50HP65FB2? • Best-in-class efficiency (low V CE (sat) + fast switching) • High reliability (wide temp range) • Integrated diode* simplifies design • Cost-effective for industrial & automotive power systems

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Infineon Technologies

Product：EconoDUAL™ 3 1200V/1.4mΩ CoolSiC™ MOSFET Module

Recommended reasons： **Infineon EconoDUAL™ 3 1200V/1.4mΩ CoolSiC™ SiC MOSFET Half-Bridge Module** The module features the enhanced first-generation M1H chip, integrated NTC temperature sensor, and PressFIT pins. It is available in two variants: - A TIM (Thermal Interface Material) pre-applied version (FF1MR12MM1HP_B11) - A Wave-structured substrate backside version for direct liquid cooling (FF1MR12MM1HW_B11). **Target Applications:** - Energy storage systems - General-purpose motor drives - Uninterruptible Power Supplies (UPS) - Electric vehicle charging **Product Features** - Low switching losses - Outstanding gate oxide reliability - Higher gate threshold voltage - Increased power output - Robust integrated body diode - High cosmic ray robustness - High-speed switching module - Overload operating temperature: Tvj(op) = 175°C - PressFIT pins - Screw-type power terminals - Integrated NTC temperature sensor - Insulated substrate **Application Benefits** - High switching frequency - Reduced volume and size - Lower system costs - High thermal efficiency **Competitive Advantages** - High switching frequency (>7kHz) - Optimized for high-speed motor applications **Application Areas** - Commercial, construction, and agricultural vehicles (CAV) - Energy storage systems - General-purpose motor drives (inverters and converters) - Motor control - Uninterruptible Power Supplies (UPS) - Electric vehicle charging - Hydrogen production

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Infineon Technologies

Product：CoolSiC™ MOSFET G2 1400V & 1200 V Easy Module

Recommended reasons： **CoolSiC™ MOSFET G2 Series** **Product Features:** - Ultra-low switching losses - Wider maximum VGS range: -10V to +25V - Maximum overload operating temperature up to Tvj = 200°C - Maximum short-circuit withstand time: 2µs - Gate threshold voltage: 4.2V **Application Benefits:** - Higher energy efficiency - Optimized heat dissipation - Increased power density - New levels of robustness - High reliability - Easy to parallel **Competitive Advantages:** - **Enhanced Performance:** Lower switching losses and higher efficiency - **.XT Interconnection Technology:** Lower thermal resistance, resulting in cooler MOSFET operation - Best-in-class lowest RDS(on) in the market - Guaranteed maximum short-circuit withstand time in the datasheet - Unique robustness **1400V CoolSiC™ MOSFET G2 Series TO-247 and TO-247 Plus Reflow Packages** Optimized for high bus voltage applications, these devices are designed to handle bus voltages exceeding 1000V. The power pins of the series are thickened to 2mm, enabling the devices to carry higher currents. The back-side reflow soldering design enhances the product's reliability, providing a robust solution for high-voltage power electronic systems. **CoolSiC™ MOSFET G2 Easy 1200V Silicon Carbide Module with New Packaging – Industry First** The industry-first 1200V CoolSiC™ MOSFET G2 Easy module adopts a new packaging design to achieve lower power losses. It also supports higher virtual operating junction temperatures and meets requirements for extended system lifetimes. This ensures reliable and stable operation of equipment in harsh environments over the long term.

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Navitas Semiconductor Ltd.

Product：High Power GaNSafe™ Power ICs

Recommended reasons： Navitas high-power GaNSafe 4th generation family integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness in high-power applications. It is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. GaNSafe integrated features and functions include: • Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density. • High-speed short-circuit protection, with autonomous ‘detect and protect’ within 50 ns – 4x faster than competing discrete solutions. • Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors. • 650 V continuous, and 800 V transient voltage capability to aid survival during extraordinary application conditions. • Easy-to-use, complete, high-power, high-reliability, high-performance power IC with only 4 pins, to accelerate customer designs. • Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements. In 2025, GaNSafe power ICs passed both AEC-Q100 and AEC-Q101 automotive-grade certifications. This marks the official entry of GaN technology into a new phase of application in the electric vehicle market. Meanwhile, leading domestic automakers have already adopted GaNSafe to develop the world's first commercial GaN-based on-board charger (OBC).

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Chipone Technology （Beijing）Co., Ltd.

Product：LED driver IC ICND7001+ICND7201

Recommended reasons：

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Vishay Intertechnology

Product：SiC Schottky diodes in the SOT-227 package

Recommended reasons： Designed to deliver high speed and efficiency for high frequency applications, Vishay’s 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class. The devices consist of 40 A to 240 A dual-diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes’ low forward voltage drop down to 1.36 V dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail. Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions. The diodes deliver high temperature operation to +175 C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.

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Shenzhen Kiwi Instruments Co., Ltd

Product：Three-phase Sensorless BLDC Motor Driver KP93102

Recommended reasons： KP93102 is a three-phase sensor-less BLDC motor driver. It has an a built-in BEMF detection algorithm to detect the rotor position, eliminating the need for hall sensors. It integrates both the algorithm and the driving circuit, enabling motor driving with a single chip to simplify the peripheral circuit design. The quasi-sinusoidal three-phase driving algorithm ensures a sine waveform of the output current, effectively reducing motor operation noise and vibration, making it suitable for efficient and silent application scenarios. It supports both PWM duty and DC voltage speed control, and recognizes ultra-wide frequency range of 0.1kHz to 50kHz, making it adaptable to various application scenarios. When the input PWM signal remains low for 20 ms, the chip automatically enters an ultra-low power standby mode. With four starting modes, KP93102 fully caters to the operating requirements of motors in different scenarios such as slow start and fast start. It adopts a simple peripheral circuit (two resistors) to set the PWM speed control slope, minimum speed, and stop duty. It supports multiple speed feedback modes including FG, 1/2FG, 1/3FG and RD. KP93102 is equipped with complete protection functions including under voltage protection, over current protection, over temperature protection, lockout protection, lock and restart, over voltage protection, which greatly improves the reliability of the chip.

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WeEn Semiconductors Co.,Ltd

Product： WeEn Top side cooling product series - WNSC2M40075TB-A & WNSC2M75120TB-A series

Recommended reasons： WeEn Semiconductor introduces a range of top-side-cooling(TSC), surface-mount(SMD) SiC devices in packages including TSPAK and TOLT, both SiC Schottky diodes and SiC MOSFET has been planned. Compared to traditional bottom-side-cooling SMD devices, the top-side-cooling package provides customers with a more flexible thermal dissipating solution, which can explore the performance potential of SiC devices to a greater extent. Based on the TSC package design, the heat can be transferred directly to the heatsink, without going through the thermal vias of the PCB, significantly reducing the thermal resistance of the junction to heatsink by about 17% ~ 19%, helping to improve the circuit performance or down-grading the power device spec to save the cost. With eliminating the thermal vias or PCB heat dissipation copper area, the returning current can go just beneath the device, this will help to obtain a minimum current loop area and very low trace parasitic inductance, so that the switching loss and EMI radiation could be significantly minimized. This helps to shorten the product EMC debugging time and save the cost. The TSC package not only offers thermal performance comparable with traditional through-hole-mount packages such as TO-247, but also has the advantages of an SMD device PCB assembly, manufacturing speed, stability and automation level will be improved. WeEn provides a large portfolio of TSC parts, and both industrial and auto-grade products are available. The TSC package can be applied to various power conversion devices such as EV OBC, EVC modules, server power supply, photovoltaic inverter, etc., to help product design improve power density and cost saving. The WeEn TOLT products offer 650V 20 to 70mΩ SiC MOSFETs and 10 to 20A SiC SBD. The WeEn TSPAK products offer 650V~1200V, 12~150mΩ SiC MOSFETs and 10~40A SiC SBD.

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Nexperia

Product：NextPower 80/100 V MOSFET

Recommended reasons： Nexperia has unveiled 16 new 80 V and 100 V power MOSFETs in its compact and innovative CCPAK1212 copper-clip package, setting a new benchmark in power density and overall device performance. Designed to meet the demands of power-hungry applications, this product launch is tailored for sectors such as motor control, power supplies, battery management systems (BMS), and renewable energy infrastructure. With options for both top-side and bottom-side cooling, these MOSFETs offer flexibility and reliability, helping engineers effectively manage thermal performance under high power loads. The key to the outstanding performance of the CCPAK1212 devices lies in their internal copper-clip construction. Unlike traditional packages that use wire bonds, these MOSFETs employ a structure where the silicon die is enclosed between two copper layers, the drain tab on one side and the source clip on the other. This architecture significantly reduces on-resistance and parasitic inductance, resulting in superior electrical performance and enhanced thermal management. The elimination of wire bonds further contributes to higher current handling and better reliability. A standout in this new range is the PSMN1R0-100ASF, a 100 V MOSFET with an exceptionally low on-resistance of 0.99 mΩ. It can handle up to 460 A and dissipate 1.55 kW of power, all within a compact 12 mm x 12 mm CCPAK1212 footprint. Its counterpart, the PSMN1R0-100CSF, provides similar

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Metanergy Inc.

Product：All-in-One Edge AI—MYi0003V0405

Recommended reasons： We has launched a rare domestically integrated star product, "Gathered at One Core, Extraordinary" — MYi0003V0405. This product integrates MCU, Driver, and MOSFET into one, with an integrated design that can reduce the overall board area by at least 50%. It perfectly addresses pain points such as volume, surface mounting, and heat dissipation, widely applicable in fans, small water pumps, and automotive thermal management systems. Besides providing customers with better reliability, it also offers cost reduction advantages. The product has an internal resistance of about 55 milliohms. Under equivalent current conditions, the heat generated by similar products from competitors is at least 3-5 times that of our products. It effectively reduces the difficulties of terminal devices in heat dissipation and circuit board area, solving problems such as product failures and shortened lifespan due to overheating. It meets the demand for miniaturization of terminal equipment. Solutions developed based on this product can optimize complex circuit boards from double-sided or four-layer boards to single-sided boards, enabling customers to quickly produce stable, high-yield products.

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Alpha & Omega Semiconductor Limited

Product：AONK40202, 25V MOSFET in DFN3.3x3.3 Source-Down Packaging that Meets Power Demands in AI Servers

Recommended reasons： AONK40202, which utilizes advanced DFN3.3x3.3 Source-Down technology, offers a reduction in power losses and delivers better thermal performance compared to traditional DFN3.3x3.3 Drain-Down packaging solutions. The AONK40202, with its lower on-state resistance (RDS(on)) and enhanced thermal performance, provides designers with the advanced technologies necessary to utilize PCB space more effectively. These features and many more in the AONK40202 are specifically designed to meet the increasing power density demands of AI servers.

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Alpha & Omega Semiconductor Limited

Product：Mega IPM-7 Series Intelligent Power Modules

Recommended reasons： · 600V/1A – 600V/3A · Compact package: 18mm x 7.5mm · DBC technology · 3-phase RC-IGBT inverter topology for motor drives · Integrated HVIC gate driver including bootstrap circuit · Integrated over-temperature protection and monitoring functions

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onsemi

Product：UG4SC075005L8S 5mOhm /750V SiC Combo JFET in TOLL

Recommended reasons： onsemi’s UG4SC075005L8S are very popular in AI PSU designs and are enabling the next generation of 20kW systems. It addresses critical challenges in high-current, high-power scenarios through its innovative architecture, high efficiency, reliability, and system compatibility. Key features/competitive advantages include: • Combo JFET is designed to give users separate access to the MOSFET and SiC JFET gates • Low RDSON-> Low loss, high efficiency • Peak Current (IDM)-> High current ride through capability • Low RθJC-> Low TJ and better lifetime • Speed controllability-> Ideal for circuit protection and multiple parallel application • Simple construction-> Long lifetime without parameter shift • Gate Drive Compatibility with silicon devices that have a 5V threshold, enhanced reliability, and simplified speed control.

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Toshiba Devices & Storage (Shanghai) Co., Ltd.

Product：4 Channel High Speed Magnetic Coupling Digital Isolator DCL541L01

Recommended reasons： KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched high-speed quad-channel digital isolators, the “DCL54xx01 Series,” that feature 100kV/μs (min) of high common mode transient immunity (CMTI) and a 150Mbps high-speed data rate. Volume shipments of the six products in the series start today. Ensuring the safety and reliability of factory automation equipment requires isolation devices that ensure insulation and prevent noise propagation. Toshiba is now offering digital isolators as a solution that address requirements for higher speed and multi-channel signal communications and high CMTI. The new products use Toshiba’s proprietary magnetic coupling type insulated transmission method to deliver a high CMTI of 100kV/μs (min) [1] . This realizes high tolerance of electrical noise between input/output in isolated signal communications, and also contributes to stable control signal transmission and equipment operation. With their low pulse width distortion of 0.8ns (typ.) [2] and high-speed data rate of 150Mbps (max), the digital isolators are suitable for multi-channel high-speed communications applications such as I/O interfaces with SPI communications. Toshiba has provided its customers with photocouplers, isolation devices that ensure insulation through optical coupling, for 50 years now. Going forward, in addition to photocouplers, the company will expand its lineup of high-speed quad-channel digital isolators, plus the number of channels and packages, and offer high-quality insulation devices that support the reliable, real-time data transmission required for industrial equipment control. Toshiba Standard Digital Isolators have a structure that uses oxide film in the chip to insulate them. Therefore, the isolation life of the standard digital isolator can be predicted by applying the same concept as MOSFET gate-oxide breakdown over time (TDDB : Time Dependent Dielectric Breakdown [Note 1] ). "Magnetic and capacitive coupler for basic and reinforced insulation" [Note 2] has been standardized by the International Safety Standards under standard number IEC 60747-17: 2020 Ed. 1 and VDE V 0884-11, and the aforementioned TDDB test conditions have been defined. The DCL54x01 series complies with VDE V 0884-11 standards by applying for reinforced isolation to the maximum operating isolation voltage V IORM=1.0kVrms [Note 3]. TDDB test is conducted at 1.2kVrms, a factor of safety (1.2) multiplied by the above V IORM required for reinforced isolation. Also, the life determination point is 37.5 years [Note 4] @ 1.2kVrms on the extrapolation line of 1ppm defect rate required for reinforced isolation. As a reference, in addition to testing the rated life required at a minimum for the above VDE qualification, we predict an isolation life of 70 years or more, exceeding the VDE specifications, under accelerated conditions of the test voltage. Features • High common mode transient immunity: CMTI=100kV/μs (min) • high-speed data rate: tbps=150Mbps (max) • Low pulse width distortion: PWD=0.8ns (typ.) (VDD1=VDD2=5V) • Quad-channel: Four channel of forward directions and zero channel of reverse direction Three channel of forward directions and one channel of reverse direction

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ROHM

Product：SiC molded modules in the HSDIP20 package

Recommended reasons： ROHM has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications. The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation). This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.

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Efficient Power Conversion Corporation

Product：EPC2367

Recommended reasons： The EPC2367 is a 100 V, enhancement-mode gallium nitride (eGaN^®) FET that delivers industry-leading efficiency, switching speed, and power density for advanced power conversion applications. With a typical RDS(on) of just 1.2 mΩ and ultra-low gate charge (QG), it is specifically engineered for high-frequency, high-performance power systems where traditional silicon MOSFETs fall short. Packaged in a compact, thermally enhanced 3 mm x 5 mm QFN, the EPC2367 supports top-side cooling and is optimized for layouts that require minimal parasitics—enabling faster design cycles and superior thermal management. It operates reliably at switching frequencies up to several MHz, making it ideal for power designers looking to reduce system size, improve transient response, and minimize EMI. Key Features: • Voltage rating: 100 V • Typical RDS(on): 1.2 mΩ • Ultra-low QG and QOSS for fast switching • Zero reverse recovery and low output capacitance • Top-side cooled QFN package (3 mm x 5 mm) • Optimized for high-speed, high-efficiency power conversion Target Applications: • High-density DC-DC converters in AI servers, telecom, and industrial computing • Lidar systems for automotive, robotics, and 3D sensing—supporting fast laser pulsing and tight form factors • Class-D audio amplifiers where efficiency, size, and low distortion are critical • Power stages for AI and GPU server boards, enabling better power delivery with reduced thermal load • Battery-powered robotics, drones, and eMobility systems including electric scooters and personal transport • Programmable power supplies and precision lab instruments requiring fast, low-noise switching Competitive Advantages: What sets the EPC2367 apart is its combination of electrical performance and ease of use. Compared to legacy silicon MOSFETs, it offers: • Higher efficiency through dramatically lower switching and conduction losses • Smaller system size thanks to high-frequency operation and reduced passive component requirements • Simpler thermal design with top-side cooling and reduced heat generation • Faster transient response, enabling better regulation in dynamic systems Moreover, EPC supports the EPC2367 with robust application documentation, reference designs, and its GaN First Time Right design methodology—empowering engineers to transition confidently from silicon to GaN with fewer iterations and faster time-to-market. In summary, the EPC2367 embodies the next step in GaN innovation—offering best-in-class performance in a compact, user-friendly form that enables designers to meet the demands of modern power systems.

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Allegro Microsystems

Product：A89224 48V SoC

Recommended reasons： The A89224 is a game-changing automotive MCU designed to simplify and enhance your 48V BLDC motor control applications. This highly integrated device combines a powerful 32-bit ARM Cortex-M4 core, a robust 90V MOSFET driver, and precision current sensing, all within a compact 48-pin QFN package. This unprecedented level of integration minimizes external components, reduces board space, and accelerates your time to market. Using the A89224 family allows users to reduce development time and costs with its simplified design and integrated features, improve motor performance and efficiency through precise control and current sensing and enhance system reliability with robust automotive-grade qualification.

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